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| AP2303N Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 240m - 1.9A Description SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 30 20 -1.9 -1.5 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200407042 AP2303N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.1 2 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40 Max. Units 240 460 -1 -10 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-10V, ID=-1.7A VGS=-4.5V, ID=-1.3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-1.7A VDS=-30V, VGS=0V VDS=-30V, VGS=0V VGS= 20V ID=-1.7A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. - Typ. - Max. Units -1 -10 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=-1.25A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2303N 10 10 T A =25 C 8 o -ID , Drain Current (A) 6 -ID , Drain Current (A) -10V -8.0V -6.0V -5.0V T A =150 C 8 o -10V -8.0V -6.0V -5.0V 6 4 V G =-4.0V 4 V G =-4.0V 2 2 0 0 0 1 2 3 4 5 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 250 1.8 1.6 I D =-1.7A V G = -10V Normalized R DS(ON) I D =-1.3A T A =25 200 1.4 RDSON (m ) 1.2 150 1 0.8 100 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 10 3 1 2 T j =150 o C 0 T j =25 o C -VGS(th) (V) 1 0 -50 -IF(A) 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2303N 14 1000 f=1.0MHz 12 -VGS , Gate to Source Voltage (V) 10 I D = -1.7A V DS = -15V C iss C (pF) 8 100 C oss 6 4 C rss 2 0 0 2 4 6 8 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 0.1 0.1 0.05 -ID (A) 1ms 1 0.01 PDM t T 0.01 Single Pulse 10ms 0.1 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W T A =25 o C Single Pulse 0.01 0.1 1 10 100ms 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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